CRS03
TOSHIBA Schottky Barrier Rectifier
Schottky Barrier Type
CRS03
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
•
•
•
•
Low forward voltage: V
FM
= 0.45 V (max)
Average forward current: I
F (AV)
= 1.0 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Suitable for compact assembly due to small surface-mount package
“S−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
30
1.0 (Note 1)
20 (50 Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
3-2A1A
Note 1: Ta
=
61°C
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm, land size: 6 mm
×
6 mm)
Weight: 0.013 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Repetitive peak reverse current
Junction capacitance
I
RRM (1)
I
RRM (2)
C
j
Test Condition
I
FM
=
0.1 A
I
FM
=
0.7 A
I
FM
=
1.0 A
V
RRM
=
5 V
V
RRM
=
30 V
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
Thermal resistance (junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
⎯
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.33
0.425
0.45
0.5
⎯
40
⎯
⎯
⎯
Max
⎯
0.45
⎯
⎯
100
⎯
70
°C/W
140
20
°C/W
μA
pF
V
Unit
Thermal resistance (junction to lead)
R
th (j-ℓ)
1
2006-11-13
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
