GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High Power Switching Applications
The 4th Generation
Unit: mm
·
·
·
·
FRD included between emitter and collector
Enhancement-mode
High speed IGBT : t
f
= 0.25 µs (typ.) (I
C
= 60 A)
FRD : t
rr
= 0.8 µs (typ.) (di/dt =
−20
A/µs)
Low saturation voltage: V
CE (sat)
= 2.3 V (typ.) (I
C
= 60 A)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Emitter-Collector
Forward Current
Collector Power Dissipation
(Tc
=
25°C)
Junction Temperature
Storage Temperature
Screw Torque
DC
1 ms
DC
1 ms
symbol
V
CES
V
GES
I
C
I
CP
I
ECF
I
ECFP
P
C
T
j
T
stg
¾
Rating
1000
±25
60
120
15
120
170
150
-55~150
0.8
Unit
V
V
A
JEDEC
A
W
°C
°C
N�½�m
―
―
2-21F2C
JEITA
TOSHIBA
Weight: 9.75 g (typ.)
Equivalent Circuit
Collector
Gate
Emitter
1
2002-01-18
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
