RN1401�½�RN1406
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1401, RN1402, RN1403
RN1404, RN1405, RN1406
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplified circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2401~RN2406
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN1401
RN1402
RN1403
RN1404
RN1405
RN1406
R1 (kΩ
4.7
10
22
47
2.2
4.7
R2 (kΩ
4.7
10
22
47
47
47
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1401~1406
RN1401~1406
RN1401~1404
RN1405, 1406
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
50
50
10
5
100
200
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
