TB62706BN/BF
ELECTRICAL CHARACTERISTICS
(V
DD
= 5.0 V, Ta = 25°C unless otherwise noted)
CHARACTERISTIC
"H" Level
Input Voltage
"L" Level
Output Leakage Current
Output Voltage
SERIAL−OUT
V
IL
I
OH
V
OL
V
OH
I
OL1
I
OL2
Current Skew
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
―
Ta =
−40~85°C
V
OH
= 15.0 V
I
OL
= 1.0 mA
I
OH
=
−1.0
mA
V
CE
= 0.7 V
V
CE
= 0.4 V
I
O
= 40 mA,
V
CE
= 0.4 V
V
CE
= 1.0 V
V
CE
= 0.7 V
I
O
= 75 mA,
V
CE
= 0.7 V
R
EXT
= 470
Ω,
Ta =
−40~85°C
―
―
R
EXT
= OPEN,
OUT0 ~ 15 = off
R
EXT
= 470
Ω,
OUT0 ~ 15 = off
R
EXT
= 250
Ω,
OUT0 ~ 15 = off
R
EXT
= 470
Ω,
OUT0 ~ 15 = on
R
EXT
= 250
Ω,
OUT0 ~ 15 = on
R
EXT
= 470
Ω
(Include current
matching)
R
EXT
= 470
Ω
R
EXT
= 250
Ω
(Include current
matching)
R
EXT
= 250
Ω
SYMBOL
V
IH
TEST
CIR−
CUIT
―
CONDITION
Ta =
−40~85°C
MIN
0.7
V
DD
GND
―
―
4.6
34.1
33.7
―
64.2
63.8
―
―
150
100
―
3.5
6.5
10.0
18.0
TYP.
―
―
―
―
―
40.0
39.5
±1.5
75.5
75.0
±1.5
1.5
300
200
0.6
5.8
10.7
16.0
28.3
MAX
V
DD
0.3
V
DD
10
0.4
―
45.9
45.3
±6.0
86.8
86.2
±6.0
5.0
600
400
1.2
8.0
15.0
22.0
38.5
mA
V
UNIT
µA
V
Output Current 1
mA
∆
I
OL1
I
OL3
I
OL4
%
Output Current 2
mA
Current Skew
Supply Voltage Regulation
Pull−Up Resistor
Pull−Down Resistor
∆
I
OL2
% / V
DD
R
IN (up)
R
IN (down)
I
DD (off) 1
%
%/V
Ω
Ω
"OFF"
Supply Current
I
DD (off) 2
I
DD (off) 3
"ON"
I
DD (on) 1
I
DD (on) 2
5
2006-06-14
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
