TC74HC4051,4052AP/AF/AFT,4053AP/AF/AFN/AFT
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Test Condition
V
EE
(V) V
CC
(V)
2.0
High-level control
input voltage
V
IHC
⎯
Ta = 25°C
Min
1.50
3.15
4.20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Ta =
−
40 to 85°C
Max
⎯
⎯
⎯
Unit
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
Min
1.50
3.15
4.20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
4.5
6.0
2.0
V
0.50
1.35
1.80
180
120
100
⎯
0.50
1.35
1.80
225
150
125
⎯
Ω
Low-level control
input voltage
V
ILC
⎯
4.5
6.0
V
V
IN
=
V
ILC
or V
IHC
V
I/O
=
V
CC
to V
EE
I
I/O
≤
2 mA
ON resistance
R
ON
V
IN
=
V
ILC
or V
IHC
V
I/O
=
V
CC
or V
EE
I
I/O
≤
2 mA
Difference of ON
resistance between
switches
Input/output leakage
current
(switch off)
Switch input leakage
current
(switch on)
Control input current
Quiescent supply
current
I
IN
I
CC
V
IN
=
V
ILC
or V
IHC
ΔR
ON
V
I/O
=
V
CC
to V
EE
I
I/O
≤
2 mA
V
OS
=
V
CC
or GND
I
OFF
V
IS
=
GND or V
CC
V
IN
=
V
ILC
or V
IHC
I
IZ
V
OS
=
V
CC
or GND
V
IN
=
V
ILC
or V
IHC
V
IN
=
V
CC
or GND
V
IN
=
V
CC
or GND
GND
−
4.5
−
6.0
4.5
4.5
6.0
2.0
4.5
4.5
6.0
4.5
4.5
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
85
55
50
150
70
50
45
10
5
5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
GND
GND
−
4.5
−
6.0
150
100
80
30
12
10
±
60
±
100
±
60
±
100
±
0.1
190
125
100
35
15
12
±
600
±
1000
±
600
±
1000
±
1.0
Ω
GND
−
4.5
−
6.0
GND
−
6.0
nA
GND
−
6.0
nA
μ
A
μ
A
GND
GND
−
6.0
4.0
8.0
40.0
80.0
6
2007-10-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
