TC74VHC123,221AF/AFN/AFT/AFK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74VHC123AF,TC74VHC123AFN,TC74VHC123AFT,TC74VHC123AFK
TC74VHC221AF,TC74VHC221AFN,TC74VHC221AFT,TC74VHC221AFK
Dual Monostable Multivibrator
TC74VHC123AF/AFN/AFT/AFK Retriggerble
TC74VHC221AF/AFN/AFT/AFK
Non-Retriggerble
The TC74VHC123A/221A are high speed CMOS
MONOSTABLE MULTIVIBRATOR fabricated with silicon gate
C
2
MOS technology.
There are two trigger inputs,
A input (negative edge), and B
input (positive edge). These inputs are valid for a slow rise/fall
time signal (t
r
=
t
f
=
1 s) as they are schmitt trigger inputs. This
device may also be triggered by using
CLR
input (positive
edge).
After triggering, the output stays in a MONOSTABLE state for
a time period determined by the external resistor and capacitor
(R
X
, C
X
). A low level at the
CLR
input breaks this state.
Limits for C
X
and R
X
are:
External capacitor, C
X
: No limit
External resistor, R
X
: V
CC
=
2.0 V more than 5 k
Ω
V
CC
≥
3.0 V more than 1 k
Ω
An input protection circuit ensures that 0 to 5.5 V can be
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5 V to 3 V systems and two
supply systems such as battery back up. This circuit prevents
device destruction due to mismatched supply and input voltages.
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74VHC123AF, TC74VHC221AF
TC74VHC123AFN, TC74VHC221AFN
TC74VHC123AFT, TC74VHC221AFT
Features
•
•
High speed: t
pd
=
8.1 ns (typ.) at V
CC
=
5 V
Low power dissipation
Standby state: 4
μ
A (max) at Ta
=
25°C
Active state: 600
μ
A (max) at Ta
=
25°C
TC74VHC123AFK, TC74VHC221AFK
•
•
•
•
•
High noise immunity: V
NIH
=
V
NIL
=
28% V
CC
(min)
Power down protection is equipped with all inputs.
∼
Balanced propagation delays: t
pLH
−
t
pHL
Wide operating voltage range: V
CC
(opr)
=
2 to 5.5 V
Pin and function compatible with 74HC123A/221A
Weight
SOP16-P-300-1.27A
SOL16-P-150-1.27
TSSOP16-P-0044-0.65A
VSSOP16-P-0030-0.50
: 0.18 g (typ.)
: 0.13 g (typ.)
: 0.06 g (typ.)
: 0.02 g (typ.)
1
2007-10-19
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
