MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1414-10LA
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 29.0dBm
HIGH POWER
P1dB=40.5dBm at 14.0GHz to 14.5GHz
HIGH GAIN
G1dB=6.0 dB at 14.0 GHz to 14.5GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3
rd
Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P
1dB
G
1dB
I
DS1
ΔG
( Ta= 25
°
C )
UNIT
dBm
dB
A
dB
%
dBc
A
°
C
MIN.
40.0
5.0
⎯
⎯
⎯
-42
⎯
⎯
TYP. MAX.
40.5
⎯
6.0
4.0
⎯
23
-45
4.0
⎯
⎯
5.0
±0.8
⎯
⎯
5.0
90
CONDITIONS
VDS= 9V
f= 14.0 to 14.5GHz
η
add
IM3
IDS2
ΔTch
Two-Tone Test
Po=29.0 dBm
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 100
Ω
(MAX.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
( Ta= 25
°
C )
UNIT
mS
V
A
V
°
C/W
MIN.
⎯
-2.0
⎯
-5
⎯
TYP.
2800
-3.5
10.0
⎯
2.0
MAX.
⎯
-5.0
⎯
⎯
2.5
gm
V
GSoff
I
DSS
V
GSO
R
th(c-c)
CONDITIONS
V
DS
= 3V
I
DS
= 4.8A
V
DS
=
3V
I
DS
= 145mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -145μA
Channel to Case
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. May 2007
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
