TLP250
TOSHIBA Photocoupler
GaAℓAs Ired & Photo−IC
TLP250
Transistor Inverter
Inverter For Air Conditioner
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8
−
lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
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Input threshold current: I
F
=5mA(max.)
Supply current (I
CC
): 11mA(max.)
Supply voltage (V
CC
): 10
−
35V
Output current (I
O
): ±1.5A (max.)
Switching time (t
pLH
/t
pHL
): 0.5μs(max.)
Isolation voltage: 2500V
rms
(min.)
UL recognized: UL1577, file No.E67349
Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890V
PK
Highest Permissible Over Voltage
Please designate “Option(D4)”
1
2
8
7
6
5
Unit in mm
TOSHIBA
11−10C4
Weight: 0.54 g(Typ.)
: 4000V
PK
(Note):When a EN60747-5-2 approved type is needed,
Pin Configuration (top view)
Truth Table
Tr1
Input
LED
On
Off
On
Off
Tr2
Off
On
3
4
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : GND
6 : V
O
(Output)
7 : V
O
8 : V
CC
Schmatic
I
F
2+
V
F
3-
I
CC
V
CC
8
(T
r
1)
7
I
O
(T
r
2)
6
V
O
V
O
GND
A 0.1μF bypass capcitor must be
connected between pin 8 and 5 (See Note 5).
5
1
2007-10-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
