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TLP350 参数 Datasheet PDF下载

TLP350图片预览
型号: TLP350
PDF下载: 下载PDF文件 查看货源
内容描述: GaAℓAs IRED +图片IC [GaAГAs IRED + Photo IC]
分类和应用:
文件页数/大小: 9 页 / 274 K
品牌: TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
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TLP350
TOSHIBA Photocoupler
GaAℓAs IRED + Photo IC
TLP350
Industrial Inverter
Inverter for Air Conditioner
IGBT/Power MOSFET Gate Drive
IH(Induction Heating)
The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an
integrated photodetector.
This unit is an 8-lead DIP package.
The TLP350 is suitable for gate driving IGBTs or power MOSFETs.
Peak output current : I
O
= ±2.5A (max)
Guaranteed performance over temperature :
−40
to 100°C
Supply current : I
CC
= 2 mA (max)
Power supply voltage: V
CC
= 15 to 30 V
Threshold input current : I
FLH
= 5 mA (max)
Switching time (t
pLH
/t
pHL
) : 500 ns (max)
Common mode transient immunity : 15 kV/μs
Isolation voltage : 3750 Vrms
UL Recognized : UL1577,File No.E67349
Option(D4)
VDE Approved : DIN EN 60747-5-2
Maximum Operating Insulation Voltage : 890V
PK
Highest Permissible Over Voltage
Please designate “Option(D4)”
: 6000V
PK
(Note):When a EN 60747-5-2 approved type is needed,
TOSHIBA
11-10C4
Unit: mm
Weight: 0.54 g (typ.)
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
Pin Configuration
(top view)
1
2
3
4
8
7
6
5
1: NC
2: Anode
3: Cathode
4: NC
5: GND
6: V
O
(output)
7: NC
8: V
CC
Schematic
(Tr1)
I
F
2+
V
F
3−
(Tr2)
I
CC
8
V
CC
I
O
6
V
O
5
GND
A 0.1
μF
bypass capacitor must be connected
between pins 8 and 5. (See Note 6)
1
2007-10-01