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TLP3526 参数 Datasheet PDF下载

TLP3526图片预览
型号: TLP3526
PDF下载: 下载PDF文件 查看货源
内容描述: 东芝光电耦合的GaAs红外发光二极管和光电可控硅 [TOSHIBA Photocoupler GaAs Ired & Photo−Triac]
分类和应用: 可控硅光电二极管
文件页数/大小: 6 页 / 168 K
品牌: TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
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TLP3526
Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
53°C)
LED
Peak forward current (100µs pulse, 100pps)
Reverse voltage
Junction temperature
Off-state output terminal voltage
On-state RMS current
Detector
Ta = 40°C
Ta = 60°C
Symbol
I
F
∆I
F
/ °C
I
FP
V
R
T
j
V
DRM
I
T(RMS)
∆I
T
/ °C
I
SP
I
STM
T
j
T
stg
T
opr
T
sol
(Note)
BV
S
Rating
50
-0.7
1
5
125
600
1.0
0.7
-14.3
2
10
110
-40~125
-20~80
260
2500
Unit
mA
mA / °C
A
V
°C
V
A
mA / °C
A
A
°C
°C
°C
°C
V
rms
On-state current derating (Ta
40°C)
Peak current from snubber circuit
(100µs pulse, 120pps)
Peak nonrepetitive surge current (50Hz, peak)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1min., R.H.≤ 60%)
(Note 1) Device considered a two terminal: LED side pins shorted together and detector side pins shorted together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Peak current from snubber circuit
Operating temperature
Symbol
V
AC
I
F
I
SP
T
opr
Min.
15
-20
Typ.
20
Max.
240
25
1
80
Unit
V
ac
mA
A
°C
2
2002-09-25