TLP371,TLP372
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector-emitter
breakdown voltage
Emitter-collector
breakdown voltage
Collector-base
breakdown voltage (TLP371)
Emitter-base
breakdown voltage (TLP371)
Detector
Collector dark current
Symbol
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
V
(BR) CBO
V
(BR) EBO
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
I
C
= 0.1 mA
I
E
= 0.1 mA
I
C
= 0.1 mA
I
E
= 0.1 mA
V
CE
= 200 V
I
CEO
V
CE
= 200 V
Ta = 85 °C
V
CE
= 200 V
Ta = 85 °C,
R
BE
= 10 MΩ
V
CE
= 200 V
V
CE
= 5 V,
I
C
= 10 mA
V = 0, f = 1 MHz
Min
1.0
―
―
300
0.3
300
7
―
―
Typ.
1.15
―
30
―
―
―
―
10
―
Max
1.3
10
―
―
―
―
―
200
20
Unit
V
µA
pF
V
V
V
V
nA
µA
Collector dark current (TLP371)
Collector dark current (TLP371)
DC forward current gain (TLP371)
Capacitance (collecter to emitter)
I
CER
I
CBO
h
FE
C
CE
―
―
―
―
0.5
0.1
7000
10
10
―
―
―
µA
nA
―
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo-current (TLP371)
Collector-emitter
saturation voltage
Symbol
I
C
/ I
F
I
C
/ I
F (sat)
I
PB
V
CE (sat)
Test Condition
I
F
= 1 mA, V
CE
= 1 V
I
F
= 10 mA, V
CE
= 1 V
I
F
= 1 mA, V
CB
= 1 V
I
C
= 10 mA, I
F
= 1 mA
I
C
= 100 mA, I
F
= 10 mA
MIn
1000
500
―
―
0.3
Typ.
4000
―
6
―
―
Max
―
―
―
1.0
1.2
Unit
%
%
µA
V
3
2002-09-25
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
