TLP731,TLP732
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP731,TLP732
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
The TOSHIBA TLP731 and TLP732 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP package.
TLP732 is no−base internal connection for high−EMI environments.
Unit in mm
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Collector−emitter voltage: 55V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
UL recognized: UL1577, file No. E67349
BSI approved: BS EN60065: 2002
Certificate No. 8877
BS EN60950-1: 2002
Certificate No. 8878
Isolation voltage: 4000V
rms
(min.)
TOSHIBA
Weight: 0.35 g
11−7B1
•
Option (D4) type
VDE approved: DIN EN 60747-5-2,
Certificate No. 40009302
Maximum operating insulation voltage: 630V
PK
Highest permissible over voltage: 6000V
PK
(Note)
When a EN 60747-5-2 approved type is needed,
please designate the “Option (D4)”
Pin Configurations
(top view)
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Creepage distance
Clearance
7.62mm pich
standard type
: 7.0mm (min.)
: 7.0 mm (min.)
10.16mm pich
(LF2) type
8.0 mm (min.)
8.0 mm (min.)
0.5 mm (min.)
Insulation thickness : 0.5 mm (min.)
1
2007-10-01
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
