TPC6104
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC6104
Notebook PC Applications
Portable Equipment Applications
•
•
•
•
Low drain-source ON resistance: R
DS (ON)
= 33 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 12 S (typ.)
Low leakage current: I
DSS
=
−10
µA (max) (V
DS
=
−20
V)
Enhancement mode: V
th
=
−0.5
to
−1.2
V
(V
DS
=
−10
V, I
D
=
−200
µA)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
(t
=
5 s)
(Note 2a)
(t
=
5 s)
(Note 2b)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
(Note 4)
E
AR
T
ch
T
stg
Rating
−20
−20
±8
−5.5
−22
2.2
0.7
4.9
−2.75
0.22
150
−55~150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Drain power dissipation
Drain power dissipation
JEDEC
JEITA
TOSHIBA
―
―
2-3T1A
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Weight: 0.011 g (typ.)
Circuit Configuration
6
5
4
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient (t
=
5 s)
(Note 2a)
Thermal resistance, channel to ambient (t
=
5 s)
(Note 2b)
Symbol
R
th (ch-a)
R
th (ch-a)
Max
56.8
178.5
Unit
°C/W
°C/W
1
2
3
Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-06
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
