TPC8002
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
TPC8002
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Small footprint due to small and thin package
Low drain−source ON resistance
: R
DS (ON)
=
11.5
mΩ (typ.)
High forward transfer admittance : |Y
fs
| =
15
S (typ.)
Low leakage current : I
DSS
=
10
µA (max) (V
DS
= 30 V)
Enhancement−mode : V
th
= 0.8~2.0 V (V
DS
=
10
V, I
D
=
1
mA)
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
(t = 10 s)
(Note 2a)
(t = 10 s)
(Note 2b)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
30
30
±20
11
44
2.4
1.0
157
11
0.24
150
−55
to 150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-6J1B
Drain power dissipation
Drain power dissipation
Weight: 0.080 g (typ.)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
Circuit Configuration
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-02-06
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
