TPC8111
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8111
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 8.1 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 23 S (typ.)
Low leakage current: I
DSS
=
−10
µA (max) (V
DS
=
−30
V)
Enhancement-mode: V
th
=
−0.8
to
−2.0
V (V
DS
=
−10
V, I
D
=
−1
mA)
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−30
−30
±20
−11
−44
1.9
1.0
31.5
−11
0.19
150
−55
to 150
Unit
V
V
V
A
Pulse (Note 1)
JEDEC
W
W
mJ
A
mJ
°C
°C
―
―
2-6J1B
Drain power dissipation (t
=
10 s)
(Note 2a)
Drain power dissipation (t
=
10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
JEITA
TOSHIBA
Weight: 0.080 g (typ.)
Circuit Configuration
8
7
6
5
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2
3
4
1
2002-03-25
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
