TPC8127
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC8127
Lithium Ion Battery Applications
Power Management Switch Applications
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON-resistance: R
DS (ON)
= 5 mΩ (typ.)
Low leakage current: I
DSS
=
−10
μA
(max) (V
DS
=
−30
V)
Enhancement mode: V
th
=
−0.8
to
−2.0
V (V
DS
=
−10
V, I
D
=
−0.5mA)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
T
ch
T
stg
Rating
−30
−30
−25/+20
−13
−52
1.9
1.0
110
−13
150
−55
to 150
Unit
V
V
V
A
W
W
mJ
A
°C
°C
Pulse (Note 1)
Drain power dissipation (t
=
10 s)
(Note 2a)
Drain power dissipation (t
=
10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Channel temperature
Storage temperature range
(Note 1)
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8
7
6
5
Note 1, Note 2, Note 3 : See the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
4
1
2009-11-20
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
