TPC8203
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8203
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Small footprint due to small and thin package
Low drain−source ON resistance
Low leakage current
Enhancement−mode
: R
DS (ON)
=
14
mΩ (typ.)
High forward transfer admittance : |Y
fs
| = 8 S (typ.)
: I
DSS
=
10
µA (max) (V
DS
= 30 V)
: V
th
= 0.8~2.5 V (V
DS
=
10
V, I
D
=
1
mA)
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
P
D (2)
P
D (1)
P
D 2)
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
30
30
±20
6
24
1.5
W
1.0
0.75
W
0.45
46.8
6
0.10
150
−55∼150
mJ
A
mJ
℃
℃
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
―
―
2-6J1E
Single-device
Drain power
operation (Note 3a)
dissipation
Single-devece value
(t = 10 s)
(Note 2a) at dual operation
(Note 3b)
Single-device
Drain power
operation (Note 3a)
dissipation
Single-devece value
(t = 10 s)
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
Weight: 0.080 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-05-17
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
