TPCA8020-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8020-H
High-Efficiency DC／DC Converter Applications
Notebook PC Applications
5.0±0.2
6.0±0.3
Unit: mm
0.5±0.1
8
1.27
0.4±0.1
5
0.05 M A
Portable Equipment Applications
CCFL Inverter Applications
Small footprint due to a small and thin package
High speed switching
Small gate charge: Q
SW
= 3.5 nC (typ.)
Low drain−source ON-resistance: R
DS (ON)
= 22 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 15 S (typ.)
Low leakage current: I
DSS
= 10 µA (max) (V
DS
= 40 V)
Enhancement mode: V
th
= 1.1 to 2.3 V (V
DS
= 10 V, I
D
= 1 mA)
0.15±0.05
1
5.0±0.2
0.95±0.05
4
0.595
A
0.166±0.05
S
1
0.05 S
4
1.1±0.2
0.6±0.1
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
40
40
±20
7.5
30
30
2.8
1.6
26
7.5
1.9
150
−55
to 150
Unit
V
V
V
A
W
W
W
mJ
A
mJ
°C
°C
8
4.25±0.2
5 0.8±0.1
1,2,3：SOURCE
5,6,7,8：DRAIN
4：GATE
JEDEC
JEITA
TOSHIBA
⎯
⎯
2-5Q1A
Drain power dissipation (Tc=25°C)
Drain power dissipation
(t = 10 s)
Drain power dissipation
(t = 10 s)
(Note 2a)
(Note 2b)
Weight: 0.066 g (typ.)
Circuit Configuration
8
7
6
5
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 4)
Channel temperature
Storage temperature range
1
2
3
3.5±0.2
4
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-17
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
