TC1504N
REV2_20071108
1W High Linearity and High Efficiency GaAs Power FETs
FEATURES
l
1W Typical Power at 12 GHz
l
Linear Power Gain: G
L
= 9 dB Typical at 12 GHz
l
High Linearity: IP3 = 40 dBm Typical at 12 GHz
l
Non-Via Hole Source for Single-Bias Application
l
Suitable for High Reliability Application
l
Breakdown Voltage: BV
DGO
≥
13.5 V
l
Lg = 0.25
µm,
Wg = 2.4 mm
PHOTO ENLARGEMENT
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High Power Added Efficiency: Nominal PAE of 43% at 12 GHz
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Tight Vp ranges control
l
High RF input power handling capability
l
100 % DC Tested
DESCRIPTION
The TC1504N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity
and high Power Added Efficiency. The device is processed without via -holes for single-bias applications. The
short gate length enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure
consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
Backside gold plating is compatible with standard AuSn die -attach. Typical application include commercial and
military high performance power amplifiers
.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
P
1dB
G
L
IP3
PAE
I
DSS
g
m
V
P
R
th
Conditions
Output Power at 1dB Gain Compression Point ,
f
= 12 GHz V
DS
= 8 V, I
DS
= 240 mA
Linear Power Gain,
f
= 12 GHz V
DS
= 8 V, I
DS
= 240 mA
Intercept Point of the 3 -order Intermodulation,
f
= 12 GHz V
DS
=8 V, I
DS
=240 mA,*P
SCL
=17 dBm
rd
MIN
29.5
TYP
30
9
40
43
720
520
-1.7
MAX UNIT
dBm
dB
dBm
%
mA
mS
Volts
Volts
°C/W
Power Added Efficiency at 1dB Compression Power,
f
= 12 GHz
Saturated Drain -Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 4.8 mA
13.5
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
=1.2 mA
Thermal Resistance
15
12
Note:
* P
SCL
: Output Power of Single Carrier Level.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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