TC1806
REV4_20070502
5W High Linearity and High Efficiency GaAs Power FETs
FEATURES
!
5W Typical Power at 6 GHz
!
Linear Power Gain: G
L
= 10 dB Typical at 6 GHz
!
High Linearity: IP3 = 47 dBm Typical at 6 GHz
!
Via Holes Source Ground
!
Suitable for High Reliability Application
!
Breakdown Voltage: BV
DGO
≥
18 V
!
Lg = 0.6
µm,
Wg = 12 mm
!
High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz
!
Tight Vp ranges control
!
High RF input power handling capability
!
100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1806 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity
and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides
low thermal resistance and low inductance. The long gate length makes the device to have high breakdown
voltage. All devices are 100% DC tested to assure consistent quality.
Bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn
die-attach. Typical application include commercial and military high performance power amplifiers.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
P
1dB
G
L
IP3
PAE
I
DSS
g
m
V
P
R
th
Conditions
Output Power at 1dB Gain Compression Point,
f
= 6 GHz V
DS
= 8 V, I
DS
= 1200 mA
Linear Power Gain,
f
= 6 GHz V
DS
= 8 V, I
DS
= 1200 mA
Intercept Point of the 3
rd
-order Intermodulation,
f
= 6 GHz V
DS
=8V, I
DS
=1200mA,*P
SCL
= 23dBm
Power Added Efficiency at 1dB Compression Power,
f
= 6 GHz
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 24 mA
18
MIN
36
9
TYP
36.5
10
47
40
3
2000
-1.7**
22
2
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
= 6 mA
Thermal Resistance
Note:
* P
SCL
: Output Power of Single Carrier Level.
* *For the tight control of the pinch-off voltage . TC1806’s are divided into 3 groups:
(1)
TC1806P1519
: Vp = -1.5V to -1.9V (2)
TC1806P1620
: Vp = -1.6V to -2.0V
(3)TC1806P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/4
TRANSCOM [ TRANSCOM, INC. ]
