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TC2181 参数 Datasheet PDF下载

TC2181图片预览
型号: TC2181
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声和高动态范围封装的GaAs场效应管 [Low Noise and High Dynamic Range Packaged GaAs FETs]
分类和应用:
文件页数/大小: 4 页 / 284 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
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TC2181
REV4_20070504
Low Noise and High Dynamic Range Packaged GaAs FETs
FEATURES
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0.5 dB Typical Noise Figure at 12 GHz
High Associated Gain: Ga = 12 dB Typical at 12 GHz
18.5 dBm Typical Power at 12 GHz
13 dB Typical Linear Power Gain at 12 GHz
Breakdown Voltage : BV
DGO
9V
Lg = 0.25
µm,
Wg = 160
µm
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101
PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device
suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
NF
G
a
P
1dB
G
L
I
DSS
g
m
V
P
R
th
CONDITIONS
Noise Figure at V
DS
= 2 V, I
DS
= 10 mA,
f
= 12GHz
= 12GHz
= 12 GHz V
DS
= 6 V, I
DS
= 25 mA
10
17.5
11
Associated Gain at V
DS
= 2 V, I
DS
= 10 mA,
f
Linear Power Gain,
f
MIN
TYP
0.5
12
18.5
13
48
55
-1.0*
9
12
250
MAX
0.7
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
°C/W
Output Power at 1dB Gain Compression Point,
f
= 12GHz V
DS
= 6 V, I
DS
= 25 mA
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 0.32mA
Thermal Resistance
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
= 0.08mA
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C)
Symbol
Parameter
Rating
V
DS
= 2 V, I
DS
= 10 mA
TYPICAL NOISE PARAMETERS (T
A
=25
°
C)
Γ
opt
Frequency
NF
opt
G
A
Rn/50
(dB)
(GHz)
(dB)
MAG
ANG
V
DS
Drain-Source Voltage
7.0 V
2
0.33
18.4
1.00
15
0.42
V
GS
Gate-Source Voltage
-3.0 V
4
0.35
16.8
0.86
32
0.36
I
DS
Drain Current
I
DSS
6
0.37
15.2
0.70
53
0.28
I
GS
Gate Current
160
µA
8
0.40
13.8
0.53
79
0.20
P
in
RF Input Power, CW
18 dBm
10
0.46
12.5
0.39
112
0.12
12
0.52
11.5
0.29
153
0.09
P
T
Continuous Dissipation
150 mW
14
0.61
11.0
0.26
202
0.08
T
CH
Channel Temperature
175
°C
16
0.77
10.9
0.32
262
0.11
T
STG
Storage Temperature
- 65
°C
to +175
°C
18
0.95
10.6
0.51
332
0.24
*
For the tight control of the pinch-off voltage range, we divide TC2181 into 3 model numbers to fit customer design requirement
(1)TC2181P0710 : Vp = -0.7V to -1.0V (2)TC2181P0811 : Vp = -0.8V to -1.1V (3)TC2181P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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