TC2571
REV4_20070906
1 W Low-Cost Packaged PHEMT GaAs Power FETs
FEATURES
•
•
•
•
•
•
•
•
•
•
1W Typical Output Power at 6 GHz
11dB Typical Power Gain at 6 GHz
High Linearity: IP3 = 40 dBm Typical at 6 GHz
High Power Added Efficiency:
PAE
≥
43 % for Class A Operation
Suitable for High Reliability Application
Breakdown Voltage: BV
DGO
≥
15 V
Lg = 0.35
µm,
Wg = 2.4 mm
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
Low Cost Ceramic Package
PHOTO ENLARGEMENT
•
DESCRIPTION
The TC2571 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT)
GaAs Power chip. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET.
All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range
power amplifiers for commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS (T
A
=25℃)
Symbol
P
1dB
G
1dB
IP3
PAE
I
DSS
g
m
V
P
CONDITIONS
Output Power at 1dB Gain Compression Point ,
f
= 6GHz V
DS
= 8 V, I
DS
= 240 mA
Power Gain at 1dB Gain Compression ,
f
= 6GHz V
DS
= 8 V, I
DS
= 240 mA
Intercept Point of the 3 -order Intermodulation,
f
= 6GHz V
DS
= 8 V, I
DS
= 240 mA, *P
SCL
= 17 dBm
rd
MIN
TYP
MAX
UNIT
29.5
30
11
40
43
600
400
-1.7**
dBm
dB
dBm
dB
mA
mS
Volts
Volts
°C/W
Power Added Efficiency at 1dB Compression Power,
f
= 6GHz
Saturated Drain-Source Current at V
DS
= 2 V, V = 0 V
GS
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 4.8 mA
15
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
=1.2 mA
R
th
Thermal Resistance
18
20
* P
SCL
: Output Power of Single Carrier Level
** For the tight control of the pinch-off voltage range, we divide TC2571 into 3 model numbers to fit customer design requirement
(1)TC2571P1519 : Vp = -1.5V to -1.9V (2)TC2571P1620 : Vp = -1.6V to -2.0V (3)TC2571P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P 1 /3
TRANSCOM [ TRANSCOM, INC. ]
