TC2676
REV4_20070906
2 W Low-Cost Packaged PHEMT GaAs Power FETs
FEATURES
l
2 W Typical Output Power at 6 GHz
l
9 dB Typical Linear Power Gain at 6 GHz
l
High Linearity: IP3 = 43 dBm Typical at 6 GHz
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High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz
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Suitable for High Reliability Application
l
Breakdown Voltage: BV
DGO
≥
18 V
l
Lg = 0.6
µm,
Wg = 5 mm
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Tight Vp ranges control
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High RF input power handling capability
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100 % DC Tested
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Low Cost Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2676 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.
The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All devices are 100%
DC tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for
commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
P
1dB
G
L
IP3
PAE
I
DSS
g
m
Conditions
Output Power at 1dB Gain Compression Point,
f
= 6 GHz V
DS
= 8 V, I
DS
= 500 mA
Linear Power Gain,
f
= 6 GHz V
DS
= 8 V, I
DS
= 500 mA
Intercept Point of the 3
rd
-order Intermodulation,
f
= 6 GHz V
DS
= 8 V, I
DS
= 500 mA, *P
SCL
= 20 dBm
MIN
32.5
TYP MAX UNIT
33
9
43
43
1.25
850
-1.7**
22
8
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
Power Added Efficiency at 1dB Compression Power,
f
= 6 GHz
Saturated Drain -Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
18
V
P
Pinch-off Voltage at V
DS
= 2 V, I
D
= 10 mA
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
=2.5 mA
R
th
Thermal Resistance
* P
SCL
: Output Power of Single Carrier Level
** For the tight control of the pinch-off voltage range, we divide TC2676 into 3 model numbers to fit customer design requirement
(1)TC2676P1519 : Vp = -1.5V to -1.9V (2)TC2676P1620 : Vp = -1.6V to -2.0V (3)TC2676P1721 : Vp = -1.7V to -2.1V If
required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/3
TRANSCOM [ TRANSCOM, INC. ]
