TC2696
REV4_20070507
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
FEATURES
•
2 W Typical Output Power at 6 GHz
•
10 dB Typical Linear Power Gain at 6 GHz
•
High Linearity: IP3 = 43 dBm Typical at 6 GHz
•
High Power Added Efficiency:
Nominal PAE of 43 % at 6 GHz
•
Suitable for High Reliability Application
•
Breakdown Voltage: BV
DGO
≥
18 V
•
Lg = 0.6
µm,
Wg = 5 mm
•
Tight Vp ranges control
•
High RF input power handling capability
•
100 % DC Tested
PHOTO ENLARGEMENT
•
Flange Ceramic Package
DESCRIPTION
The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor
(PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high
dynamic range power amplifiers for commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
P
1dB
G
L
IP3
PAE
I
DSS
g
m
V
P
CONDITIONS
Output Power at 1dB Gain Compression Point,
f
= 6 GHz V
DS
= 8 V, I
DS
= 500 mA
Linear Power Gain,
f
= 6 GHz V
DS
= 8 V, I
DS
= 500 mA
Intercept Point of the 3
rd
-order Intermodulation,
f
= 6 GHz V
DS
= 8 V, I
DS
= 500 mA, *P
SCL
= 20 dBm
Power Added Efficiency at 1dB Compression Power,
f
= 6 GHz
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 10 mA
15
MIN
32.5
TYP
33
10
43
43
1.25
850
-1.7**
18
7
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
BV
DGO
Drain-Gate Breakdown Voltage at I
DGO
=2.5 mA
R
th
Thermal Resistance
Note: * P
SCL
: Output Power of Single Carrier Level.
** For the tight control of the pinch-off voltage range, we divide TC2696 into 3 model numbers to fit customer design requirement
(1)TC2696P1519 : Vp = -1.5V to -1.9V (2)TC2696P1620 : Vp = -1.6V to -2.0V (3)TC2696P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2
TRANSCOM [ TRANSCOM, INC. ]
