TC2997D
REV3_20050418
2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
•
20W Typical Power at 2.45 GHz
•
10dB Typical Linear Power Gain at 2.45 GHz
•
High Linearity: IP3 = 52 dBm Typical
•
High Power Added Efficiency: Nominal PAE of 40 %
•
Suitable for High Reliability Application
•
Wg = 50 mm
•
100 % DC and RF Tested
PHOTO ENLARGEMENT
•
Flange Ceramic Package
DESCRIPTION
The TC2997D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor
with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the
GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include
high dynamic range power amplifiers for commercial applications.
ELECTRICAL SPECIFICATIONS ( V
DS
= 10.5V, I
DS
= 5A @ 2.45GHz )
Symbol
P
1dB
G
L
IP3
PAE
I
DSS
g
m
V
P
BV
DGO
R
th
Linear Power Gain
Intercept Point of the 3
rd
-order Intermodulation *P
SCL
= 32 dBm
Power Added Efficiency at 1dB Compression Power
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 60 mA
Drain-Gate Breakdown Voltage at I
DGO
=15 mA
Thermal Resistance
20
CONDITIONS
Output Power at 1dB Gain Compression Point
MIN
42
9
TYP
43
10
52
40
12.5
9000
-1.7
22
0.9
MAX
UNIT
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
* P
SCL
: Output Power of Single Carrier Level.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
TRANSCOM [ TRANSCOM, INC. ]
