5.25 – 5.875 GHz 3W prematched FETs
FEATURES
TC3873
PRE2_20081024
PHOTO ENLARGEMENT
z
P dB: 34.5dBm
z
Small Signal Gain: 11 dB
z
Power Added Efficiency: 45 %
z
IP3: 43.5 dBm
z
Input/Output Prematched
z
Bias condition: 750 mA @ 8 V
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DESCRIPTION
The TC3873 is a prematched GaAs PHEMT hybrid device. It is designed for use in low cost, high
volume, and 5.25~5.875 GHz 3W amplifiers. It provides a typical gain of 11dB and P1dB of
34.5dBm. The device is packed in a copper based ceramic 10 pins SMT packages. The copper based
carrier of the package allows direct soldering of the device to the PCB..
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
FREQ
SSG
P
-1
dB
IP3
VDD
IDD
Vg
,
Conditions
Frequency Range
Small Signal Gain
Output Power at 1 dB Gain Compression
Third Order Intercept Point @ P
SCL
=21 dbm
Supply Voltage
Current Supply Without RF
Gate Voltage
Power Added Efficiency
MIN
5.25
10
33.5
42.5
TYP
11
34.5
43.5
8
750
-1.0
45
MAX
5.875
UNIT
GHz
dB
dBm
dBm
Volt
mA
Volt
%
-0.5
-1.5
Absolute Maximum Ratings
Symbol
V
dd
P
in
P
t
T
ch
T
STG
Parameter/Conditions
Drain-Source Voltage
RF Input Power
Power Dissipation
Operating Channel Temperature
Storage Temperature
Min.
27.5
11.5
-65
175
175
Max.
10
Units
Volts
dBm
W
°C
°C
Note:
1. This GaAs FET is susceptible to damage from
Electrostatic Discharge. Proper precautions
should be used when handling these devices.
2. Specifications subject to change without notice.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Phone: 886-6-5050086
Fax: 886-6-5051602
Web-Site:
www.transcominc.com.tw
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TRANSCOM [ TRANSCOM, INC. ]
