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TC3928 参数 Datasheet PDF下载

TC3928图片预览
型号: TC3928
PDF下载: 下载PDF文件 查看货源
内容描述: 包装单偏置低噪声砷化镓PHEMT场效应管 [Packaged Single-Bias Low Noise PHEMT GaAs FETs]
分类和应用: 晶体小信号场效应晶体管射频小信号场效应晶体管
文件页数/大小: 2 页 / 155 K
品牌: TRANSCOM [ TRANSCOM, INC. ]
 浏览型号TC3928的Datasheet PDF文件第2页  
TC3928
REV1_20070503
Packaged Single-Bias Low Noise PHEMT GaAs FETs
FEATURES
!
0.9 dB Typical Noise Figure at 12 GHz
!
High Associated Gain: Ga = 12 dB Typical at 12 GHz
!
21.5dBm Typical Power at 12 GHz
!
13 dB Typical Linear Power Gain at 12 GHz
!
Lg = 0.25 µm, Wg = 300 µm
!
100 % DC Tested
!
Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3928 is a single-bias medium power ceramic micro-x packaged device with TC1201 PHEMT GaAs FETs,
which is designed to provide the single power supply application. The device is suitable for oscillator, medium
power amplifier in a wide range of commercial applications. All devices are 100% DC tested to assure consistent
quality.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
NF
G
a
P
1dB
G
L
I
DS
R
th
Noise Figure at V
DS
= 5 V,
f
= 12GHz
Associated Gain at V
DS
= 5 V,
f
= 12GHz
Output Power at 1dB Gain Compression Point,
f
= 12GHz V
DS
= 5 V
Linear Power Gain,
f
= 12GHz V
DS
= 5 V
Drain-Source Current at V
DS
= 2 V
Thermal Resistance
10
20.5
12
Conditions
MIN
TYP
0.9
12
21.5
13
50
125
MAX
1.5
UNIT
dB
dB
dBm
dB
mA
°C/W
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C)
Symbol
V
DS
P
in
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
21 dBm
300 mW
175
°C
-65°C to +175°C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must be less than 300V.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2