TC3938
REV2_20070503
Packaged Single-Bias Medium Power PHEMT GaAs FETs
FEATURES
!
1.0 dB Typical Noise Figure at 12 GHz
!
High Associated Gain: Ga = 8 dB Typical at 12 GHz
!
24dBm Typical Power at 12 GHz
!
9 dB Typical Linear Power Gain at 12 GHz
!
Lg = 0.25
µm,
Wg = 600
µm
!
100 % DC Tested
!
Micro-X Metal Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3938 is a single-bias medium power ceramic micro-x packaged device with TC1304 PHEMT GaAs FETs,
which is designed to provide the single power supply application. The device is suitable for oscillator, medium
power amplifier in a wide range of commercial applications. All devices are 100% DC tested to assure consistent
quality.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
NF
G
a
P
1dB
G
L
I
DS
R
th
Noise Figure at V
DS
= 5 V,
f
Associated Gain at V
DS
= 5 V,
f
Conditions
= 12GHz
= 12GHz
7
23
7.5
MIN
TYP
1.0
8
24
9
100
65
MAX
1.5
UNIT
dB
dB
dBm
dB
mA
°C/W
Output Power at 1dB Gain Compression Point,
f
= 12GHz V
DS
= 5 V
Linear Power Gain,
f
= 12GHz V
DS
= 5 V
Drain-Source Current at V
DS
= 5 V
Thermal Resistance
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C)
Symbol
V
DS
P
in
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
24 dBm
600 mW
175
°C
-65°C to +175°C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must be less than 300V.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
TRANSCOM [ TRANSCOM, INC. ]
