TC3953A
PRE3_20070503
- Preliminary Datasheet
-
1W Single-Bias and Prematched GaAs Power PHEMTs using SMT package
FEATURES
•
Prematched for 5~10 GHz
•
1W Typical Output Power at 5~10 GHz
•
6.5dB Typical Linear Power Gain at 10 GHz
•
High Linearity: IP3 = 40 dBm Typical at 5~10 GHz
•
High Power Added Efficiency: Nominal PAE of 35% at 5~10 GHz
•
Breakdown Voltage: BV
DGO
≥
15V
•
Wg = 2.4 mm
•
100 % DC Tested
•
Suitable for High Reliability Application
PHOTO ENLARGEMENT
•
Lost Cost SMT Ceramic Package
DESCRIPTION
The TC3953A is a single-bias and prematched GaAs PHEMT. It is designed for use in low cost, high
volume, and 5~10 GHz 1W amplifiers. It provides a typical gain of 6.5 dB and P1dB of 30dBm at 10
GHz. The single positive drain bias is 9V and the typical drain-source current is 300mA. The device is
packaged in copper based ceramic 10 pins SMT packages. The copper based carrier of the package
allows direct soldering of the device to the PCB.
ELECTRICAL SPECIFICATIONS (T
A
=25℃)
℃
Symbol
P
1dB
G
L
IP3
PAE
I
DS
BV
DGO
CONDITIONS
Output Power at 1dB Gain Compression Point,
f
= 10 GHz V
DS
= 9V
Linear Power Gain,
f
= 10 GHz V
DS
= 9V
Intercept Point of the 3 -order Intermodulation,
f
= 10 GHz V
DS
= 9V, *P
SCL
= 17 dBm
Power Added Efficiency at 1dB Compression Power,
f
= 10 GHz
Drain-Source Current at V
DS
= 9V
Drain-Gate Breakdown Voltage at I
DGO
= 1.2mA
15
rd
MIN
TYP
MAX
UNIT
29
5.5
30
6.5
40
35
300
18
dBm
dB
dBm
%
mA
Volts
Note: *P
SCL
: Output Power of Single Carrier Level.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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