TC3953
PRE2_20070503
- Preliminary Datasheet
-
1 W Single-Bias GaAs Power PHEMTs prematched for 5~8 GHz
FEATURES
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Prematched for 5~8 GHz
1W of Typical Output Power at 5~8 GHz
8dB of Typical Linear Power Gain at 8 GHz
High Linearity: IP3 = 40 dBm Typical at 5~8 GHz
High Power Added Efficiency: Nominal PAE of 35 % at 5~8 GHz
Breakdown Voltage: BV
DGO
≥
15V
Wg = 2.4 mm
100 % DC Tested
Suitable for High Reliability Application
Lost Cost SMT Ceramic Package
PHOTO ENLARGEMENT
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DESCRIPTION
The TC3953 is a single-bias and prematched GaAs PHEMT. It is designed for use in low cost and high
volume 1W amplifiers for 5~8GHz. It provides typical gain of 8dB and P1dB of 30dBm at 8GHz. The
single positive drain bias is 9V and the typical drain-source current is 300mA. The device is packaged
in copper based ceramic 10 pins SMT packages. The copper based carrier of the package allows direct
soldering of the device to the PCB.
ELECTRICAL SPECIFICATIONS (T
A
=25℃)
℃
Symbol
P
1dB
G
L
IP3
PAE
I
DS
BV
DGO
CONDITIONS
Output Power at 1dB Gain Compression Point,
f
= 8 GHz V
DS
= 9V
Linear Power Gain,
f
= 8 GHz V
DS
= 9V
Intercept Point of the 3
rd
-order Intermodulation,
f
= 8 GHz V
DS
= 9V, *P
SCL
= 17 dBm
Power Added Efficiency at 1dB Compression Power,
f
= 8GHz
Drain-Source Current at V
DS
= 9V
Drain-Gate Breakdown Voltage at I
DGO
= 1.2mA
15
MIN
29
7
TYP
30
8
40
35
300
18
MAX
UNIT
dBm
dB
dBm
%
mA
Volts
Note: *P
SCL
: Output Power of Single Carrier Level.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2
TRANSCOM [ TRANSCOM, INC. ]
