TC3967
REV2_20080516
2 W Packaged Single-Bias PHEMT GaAs Power FETs
FEATURES
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2W Typical Output Power
13dB Typical Linear Power Gain at 2.45GHz
High Linearity: IP3 = 43 dBm Typical
High Power Added Efficiency: Nominal PAE of 35%
Breakdown Voltage: BV
DGO
≥
15V
Wg = 5 mm
100 % DC Tested
Suitable for High Reliability Application
Lost Cost Ceramic Package
PHOTO ENLARGEMENT
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DESCRIPTION
The TC3967 is a self-bias Cu-based ceramic packaged device with TC1601N PHEMT GaAs FETs, which is
designed to provide the single power supply. The Cu-based ceramic package provides excellent thermal
conductivity for the GaAs FET. The device is suitable for oscillator and power amplifiers in a wide range of
commercial application. All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)
Symbol
P
1dB
G
L
IP3
PAE
I
DS
BV
DGO
R
th
Linear Power Gain V
DS
= 8 V
Intercept Point of the 3
rd
-order Intermodulation V
DS
= 8 V, *P
SCL
= 20 dBm
Power Added Efficiency at 1dB Compression Power
Drain-Source Current at V
DS
= 8 V
Drain-Gate Breakdown Voltage at I
DGO
= 1.2mA
Thermal Resistance
15
CONDITIONS
Output Power at 1dB Gain Compression Point V
DS
= 8 V
MIN
32
TYP
33
13
43
35
600
18
8
MAX
UNIT
dBm
dB
dBm
%
mA
Volts
°C/W
Note: *P
SCL
: Output Power of Single Carrier Level.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/2
TRANSCOM [ TRANSCOM, INC. ]
