TC3989
REV3_20070503
5.8 GHz 35.5 dBm Prematched FETs
FEATURES
•
35.5 dBm Typical Power at 5.8 GHz
•
High Associated Gain: Ga = 8 dB Typical at 5.8 GHz
•
High Linearity: IP3 = 46 dBm Typical at 5.8 Ghz
•
High Power Added Efficiency: PAE
≥
28 % for Class A Operation
•
Suitable for High Reliability Application
•
Lg = 0.6
µm,
Wg = 12 mm
•
100 % DC and RF Tested
•
Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC3989 is a 35.5 dBm partially prematched power FET assembled in a flange ceramic package. It
requires simple matching networks to achieve high gain and high linearity for 5.8 GHz applications. All
devices are 100 % DC and RF tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS
V
D
=10 V, I
D
=1100 mA, f=5.8 GHz
Parameter
Conditions
P
-1
*
Ga*
IP3
PAE
I
DSS
g
m
V
P
BV
DGO
R
th
P
out
=23 dBm
@ P
-1
V
DS
=2 V, V
GS
=0 V
V
DS
=2 V, V
GS
=0 V
V
DS
=2 V,I
D
=24 mA
I
DGO
=6 mA
18
MIN
35
7
TYP MAX UNIT
35.5
8
46
28
3
2000
-1.7
22
2.5
dBm
dB
dBm
%
A
mS
Volts
Volts
°C/W
ABSOLUTE MAXIMUM RATINGS at 25
°
C
Symbol
V
DS
V
GS
I
D
P
T
P
in
T
CH
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Dissipation
Input Power, CW
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
3A
12 W
33 dBm
175
°C
- 65
°C
to +175
°C
* FET TO BE TESTED IN TRANSCOM FIXTURE.
TRANSCOM, INC.,
90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
TRANSCOM [ TRANSCOM, INC. ]
