AGR09070EF
Introduction
70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR09070EF
Sym
Value
Unit
The AGR09070EF is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for global sys-
tem for mobile communication (GSM), enhanced
data for global evolution (EDGE), and multicarrier
class AB power amplifier applications. This device is
manufactured on an advanced LDMOS technology,
offering state-of-the-art performance and reliability.
Packaged in an industry-standard package and
capable of delivering a minimum output power of
70 W, it is ideally suited for today's wireless base
station RF power amplifier applications.
R
JC
0.80
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Total Dissipation at T
C
= 25 °C:
AGR09070EF
Derate Above 25 C:
AGR09070EF
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value
V
DSS
65
V
GS
–0.5, +15
I
D
8.5
P
D
—
T
J
219
1.25
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
T
STG
–65, +150 °C
Figure 1. AGR09070EF (flanged) Package
Features
Typical performance ratings for GSM EDGE
(f = 941 MHz, P
OUT
= 21 W):
— Modulation spectrum:
@ ±400 kHz = –60 dBc.
@ ±600 kHz = –72 dBc.
Typical performance over entire GSM band:
— P
1dB
: 85 W typ.
— Power gain: @ P
1dB
= 18.25 dB.
— Efficiency @ P
1dB
= 56% typ.
— Return loss: –12 dB.
High-reliability, gold-metalization process.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
70 W minimum output power.
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR09070EF
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations.
PEAK Devices
Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
