AGR09085E
85 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09085E is a high-voltage, laterally diffused
metal oxide semiconductor (LDMOS) RF power tran-
sistor suitable for cellular band, code division multiple
access (CDMA), global system for mobile communi-
cation (GSM), enhanced data for global evolution
(EDGE), and time division multiple access (TDMA)
single and multicarrier class AB wireless base station
amplifier applications. This device is manufactured
on an advanced LDMOS technology offering state-
of-the-art performance, reliability, and best-in-class
thermal resistance. Packaged in an industry-stan-
dard package incorporating internal matching and
capable of delivering a minimum output power of
85 W, it is ideally suited for today's RF power ampli-
fier applications.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR09085EU
AGR09085EF
Sym
Value
Unit
R
JC
0.7
0.7
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Total Dissipation at T
C
= 25 °C:
AGR09085EU
AGR09085EF
Derate Above 25 C:
AGR09085EU
AGR09085EF
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value
V
DSS
65
V
GS
–0.5, 15
I
D
8.5
P
D
250
250
1.43
1.43
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
YLE 1
T
J
06, STYLE 1
AGR09085EU (unflanged)
AGR09085EF (flanged)
T
STG
–65, 150
Figure 1. Available Packages
Features
Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, and traffic codes 8—13:
— Output power (P
OUT
): 20 W.
— Power gain: 18 dB.
— Efficiency: 28%.
— Adjacent channel power ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: –45 dBc).
1.98 MHz offset: –60 dBc).
— Return loss: 10 dB.
High-reliability, gold-metalization process.
Best-in-class thermal resistance.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Si LDMOS.
Industry-standard packages.
85 W minimum output power.
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR09085E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations.
PEAK Devices
Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
