Preliminary Data Sheet
September 2003
AGR18090E
90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18090E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for global sys-
tem for mobile communication (GSM), enhanced
data for global evolution (EDGE), and multicarrier
class AB power amplifier applications. This device is
manufactured using advanced LDMOS technology
offering state-of-the-art performance and reliability. It
is packaged in an industry-standard package and is
capable of delivering a typical output power of 90 W,
which makes it ideally suited for today’s wireless
base station RF power amplifier applications.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR18090EU
AGR18090EF
Sym
R
ı
JC
R
ı
JC
Value
0.75
0.75
Unit
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Drain Current—Continuous
Total Dissipation at T
C
= 25 °C:
AGR18090EU
AGR18090EF
Derate Above 25
ˇC:
AGR18090EU
AGR18090EF
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value
V
DSS
65
V
GS
–0.5, 15
I
D
8.5
P
D
P
D
—
—
T
J
230
230
1.31
1.31
200
Unit
Vdc
Vdc
Adc
W
W
W/°C
W/°C
°C
°C
AGR18090EU
AGR18090EF
Figure 1. Available Packages
Features
Typical performance ratings for GSM EDGE
(f = 1.840 GHz, P
OUT
= 30 W):
— Modulation spectrum:
@ ±400 kHz = –63 dBc.
@ ±600 kHz = –73 dBc.
— Error vector magnitude (EVM) = 1.7%.
— Gain = 15 dB.
— Drain Efficiency = 31%.
Typical continuous wave (CW) performance over
entire digital communication system (DCS) band:
— P
1dB
: 90 W typ.
— Power gain: @ P
1dB
= 14 dB.
— Efficiency @ P
1dB
= 50% typ.
— Return loss: –10 dB.
High-reliability gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
90 W minimum output power.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 26 Vdc, 1.840 GHz, 90 W CW out-
put power.
Large signal impedance parameters available.
T
STG
–65, 150
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR18090E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations.
PEAK Devices
Agere
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
