AGR18125E 参数 Datasheet PDF下载

AGR18125E

125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor

Product Brief

Package Dimensions

All dimensions are in inches. Tolerances are ±0.005 in. unless specified.

AGR18125EU

PINS:

1. DRAIN

2. GATE

3. SOURCE

1

A

PEAK DEVICES

M-AGR21125U

AGR18125XU

YYWWLL XXXXX

YYWWUR

ZZZZZZZ

ZZZZZZZ

2

3

1

3

2

AGR18125EF

PINS:

1. DRAIN

2. GATE

3. SOURCE

1

1

3

3

M-AGR21125F

YYWWUR

ZZZZZZZ

2

PEAK DEVICES

AGR18125XF

YYWWLL XXXXX

ZZZZZZZ

2

Label Notes:

M before the part number denotes model program. X before the part number denotes engineering prototype.

The last two letters of the part number denote wafer technology and package type.

YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).

XXXXX = five-digit wafer lot number.

ZZZZZZZ = seven-digit assembly lot number on production parts.

ZZZZZZZZZZZZ = 12-digit (five-digit lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.