Product Brief
AGR18125E
125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18125E is a 125 W, 26 V, N-channel gold-
metallized, laterally diffused metal oxide semicon-
ductor (LDMOS) RF power field effect transistor
(FET) suitable for global system for mobile communi-
cation (GSM), enhanced data for global evolution
(EDGE), and multicarrier class AB power amplifier
applications. This device is manufactured using
advanced LDMOS technology offering state-of-the-
art performance and reliability. It is packaged in an
industry-standard package and is capable of deliver-
ing a minimum output power of 125 W which makes
it ideally suited for today’s RF power amplifier appli-
cations.
)
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case:
AGR18125EU
AGR18125EF
Sym
R
ı
JC
R
ı
JC
Value
0.5
0.5
Unit
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at T
C
= 25 °C:
AGR18125EU
AGR18125EF
Derate Above 25
°C:
AGR18125EU
AGR18125EF
Operating Junction Tempera-
ture
Storage Temperature Range
Sym Value Unit
V
DSS
65
Vdc
V
GS
–0.5, 15 Vdc
P
D
P
D
—
—
T
J
350
350
2.0
2.0
200
W
W
W/°C
W/°C
°C
°C
5B 03 STYLE 1
AGR18125EU (unflanged)
AGR18125EF (flanged)
T
STG
–65, 150
Figure 1. Available Packages
Features
Typical performance ratings for GSM EDGE
(f = 1.840 GHz, P
OUT
= 50 W)
— Modulation spectrum:
@ ± 400 kHz = –60 dBc.
@ ± 600 kHz = –72 dBc.
Typical performance over entire digital communi-
cation system (DCS) band:
— P1dB: 125 W typical (typ).
— Power gain: @ P1dB = 13.5 dB.
— Efficiency: @ P1dB = 50% typ.
— Return loss: –10 dB.
High-reliability, gold-metallization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
125 W minimum output power.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 28 Vdc, 1.840 GHz, 125 W contin-
uous wave (CW) output power.
Large signal impedance parameters available.
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR18125E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations.
PEAK Devices
Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
Agere Systems - Proprietary
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