AGR19060E
60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Table 1. Thermal Characteristics
Parameter
Thermal Resistance, Junction to Case:
AGR19060EU
AGR19060EF
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at T
C
= 25 °C:
AGR19060EU
AGR19060EF
Derate Above 25
°C:
AGR19060EU
AGR19060EF
Operating Junction Temperature
Storage Temperature Range
Symbol
V
DSS
V
GS
P
D
P
D
—
—
T
J
T
STG
Value
65
–0.5, 15
175
175
1.00
1.00
200
–65, 150
Unit
Vdc
Vdc
W
W
W/°C
W/°C
°C
°C
Symbol
Value
1.00
1.00
Unit
°C/W
°C/W
R
θJC
R
θJC
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 3. dc Characteristics
Parameter
Off Characteristics
= 300µA
Drain-source Breakdown Voltage (V
GS
= 0 V, I
D
= 90 µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
Forward Transconductance (V
DS
= 10 V, I
D
= 0.45 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 180 µA)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 500 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 0.45 A)
Symbol
V
(BR)DSS
I
GSS
I
DSS
G
FS
V
GS(th)
V
GS(Q)
V
DS(on)
Min
65
—
—
—
—
—
—
Typ
—
—
—
4.0
—
3.6
0.08
Max
—
1.8
100
5.5
—
4.8
—
—
Unit
Vdc
µAdc
µAdc
S
Vdc
Vdc
Vdc
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
