AGR19180EF
180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Electrical Characteristics
Table 1. Thermal Characteristics
Parameter
Thermal Resistance, Junction to Case
Table 2. Absolute Maximum Ratings*
Drain-source Voltage
Gate-source Voltage
Total Dissipation at T
C
= 25 °C
Derate Above 25
°
C
Operating Junction Temperature
Storage Temperature Range
Parameter
Symbol
V
DSS
V
GS
P
D
—
T
J
T
STG
Value
65
–0.5, 15
500
3
200
–65, 150
U nit
Vdc
Vdc
W
W/°C
°C
°C
Symbol
R
θJC
Value
0.35
U nit
°C/W
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Recommended operating conditions apply unless otherwise specified: T
C
= 30 °C.
Table 3. dc Characteristics
Off Characteristics
300
V
(BR)DSS
Drain-source Breakdown Voltage (V
GS
= 0, I
D
=
400
µA)
Gate-source Leakage Current (V
GS
= 5 V, V
DS
= 0 V)
I
GSS
I
DSS
Zero Gate Voltage Drain Leakage Current (V
DS
= 28 V, V
GS
= 0 V)
On Characteristics
G
FS
Forward Transconductance (V
DS
= 10 V, I
D
= 1 A)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 600 µA)
V
GS(TH)
V
GS(Q)
Gate Quiescent Voltage (V
DS
= 28 V, I
D
= 2 x 800 mA)
Drain-source On-voltage (V
GS
= 10 V, I
D
= 1 A)
V
DS(ON)
Parameter
Symbol
Min
65
—
—
—
—
—
—
Typ
—
—
—
12
—
3.8
0.08
Max
—
6
18
200
—
3.0
—
—
Unit
Vdc
µAdc
µAdc
S
Vdc
Vdc
Vdc
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
