AGR21090E
90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET
Typical Performance Characteristics
A
RD
U
CT
S
TOW
0.0
Ð
>
W
A
V
EL
E
N
GTH
170
0.49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
10
20
0.0
A
D
<Ð
A
RD
L
O
S
TOW
±
180
GTH
-170
L
EN
E
0.2
0.49
0.1
-90
0.4
0.48
)
/
Yo
(-jB
CE
0.6
7
0.4
V
WA
<Ð
-160
-85
N
TA
EP
SC
1.
0
V
TI
UC
4
0.0
0
-15
0.4
0.3
6
-75
-70
06
0.
0
-65
.5
0.6
-60
1.6
0.7
1.4
0.8
1.2
5
-5
0.9
1.0
0
-5
5
-4
MHz (f)
2110 (f1)
2140 (f2)
2170 (f3)
Z
L
Ω
Z
S
Ω
(Complex
Source Impedance) (Complex Optimum Load Impedance)
2.52 – j4.60
3.10 – j3.11
2.46 – j4.42
3.01 – j3.05
2.37 – j4.25
2.94 – j2.99
GATE (2)
Z
S
DRAIN (1)
Z
L
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
F
32
0.
18
0.
0.3
0.1
3
7
-30
-60
1.8
0
-5
-25
0.
44
0
2.
0.3
0.1
4
6
-3
5
-70
0.35
0.15
0.36
0.14
-80
-4
0
0.37
0.13
0.4
0.2
-90
0.12
0.38
0.11
-100
0.39
CA
P
A
0.1
0.4
-110
CI
T
IVE
RE
A
0.0
CT
A
NC
E
C
OM
0.4
9
1
-12
0
0.0
8
PO
N
0.4
2
EN
T
(-j
4
-1
0.
0.4
4
Z
S
X/
0
-20
3.
O
),
Zo
5
5
0.0
0
0.6
f3
D
f1
R
IN
-15
4.0
0.8
f3
U
E
S
-80
1.
0
f1
5.0
0.2
Z
L
-10
8
0.
50
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
20
10
0.6
0.4
Z
0
= 5
Ω
0.48
IN
D
90
0.
0.2
0.3
-4
0
8
10
0.1
-1
0.25
0.26
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL
ECTI
ON
COEFFI
CI
EN
T
I
N
D
EGRE
L
E
OF
ES
ANG
I
SSI
ON
COEFFI
CI
EN
T
I
N
TRA
N
SM
D
EGR
EES
20
L
E
OF
ANG
0.2
0.
31
0.
19
50
-20
0.2
2
0.2
8
0.2
9
0.2
1
-30
0.
07
30
0.
43
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
