AH314
Product Features
•
2.3 – 2.9 GHz
•
23 dB Gain
•
EVM <2.5 %@ 24 dBm Pout
•
Internal Active Bias
•
+5V Single Supply Voltage
•
+33 dBm P1dB
•
Lead-free/RoHS-compliant
5x5 mm QFN SMT package
2.3-2.9 GHz WiMAX 2W Driver Amplifier
Product Description
The AH314 is a high dynamic range broadband driver
amplifier in a surface mount package. The two-stage
amplifier has 23 dB of gain, while achieving +24 dBm of
linear output power for 2.3–2.9 GHz WiMAX/WiBro
applications.
AH314 uses a high reliability +5V InGaP/GaAs HBT
process technology. The device incorporates proprietary
bias circuitry to compensate for variations in linearity and
current draw over temperature. The device does not require
any negative bias voltage; an internal active bias allows the
AH314 to operate directly off a commonly available +5V
supply. The RoHS-compliant/Lead-free 5x5mm QFN
package is surface mountable to allow for low
manufacturing costs to the end user.
The AH314 is targeted for use in a configuration for the
driver stage amplifier in 802.16 WiMAX or WiBro
basestations where high linearity and medium power is
required.
Functional Diagram
GND / NC
GND / NC
Vbias2
Vcc1
Vpd2
Vpd1
Vbias1
GND / NC
RF IN
RF IN
Vcc2
GND / NC
RF OUT
RF OUT
RF OUT
GND / NC
GND / NC
GND / NC
GND / NC
Applications
•
802.16 WiMAX infrastructure
•
WiBro infrastructure
Specifications
(1)
Parameter
Operational Bandwidth
Output Channel Power
Power Gain
EVM
(2)
Efficiency
Output P1dB
Noise Figure
PIN_VPD Current, Ipd
Quiescent Current, Icq
(3)
Icc @ 24dBm
Device Voltage, Vcc
Typical Performance
(4)
Units Min
GHz
dBm
dB
%
%
dBm
dB
mA
mA
mA
V
2.3
+24
23
2.0
6.6
+33
6.4
36
600
700
+5
Typ
Max
2.9
Parameter
Frequency
Output Channel Power
Power Gain
S11 – Input R.L.
S22 – Output R.L.
Output P1dB
EVM
Efficiency
Noise Figure
Quiescent Current
Vpd, Vbias
Units
GHz
dBm
dB
dB
dB
dBm
%
%
dB
mA
V
Vcc=5V
2.6
+25
23.1
-8.2
-16.7
33
1.8
8.2
6.4
600
+5
Vcc=6V
2.6
+26.5
23.1
-8.6
-26
34.5
2.2
8.5
6.4
650
+6
2.5
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, in 2.5-2.7GHz tuned application circuit
shown in page 3.
2. Using an 802.16-2004 OFDMA, 64QAM-1/2,1024-FFT, 20 symbols, 30 subchannels.
3. This corresponds to the quiescent current or operating current under small-signal conditions with
bias resistor R1=68Ω off pin 1 and R2=150Ω off pin 16.
4.
This corresponds to the quiescent current or operating current under small signal conditions into
pins 1, 2, 15 and 17. Pin 1 and 16 is used a reference voltage for the internal biasing circuitry. It is
expected that PIN_VPD1 and PIN_VPD2 will pull 36 mA of current when used with series
resistors (i.e. Total device current typically will be 636 mA).
4. Typical parameters reflect performance in a tuned application circuit at +25° C.
Absolute Maximum Rating
Parameter
Storage Temperature
Collector Current, Icc ( Icc1+Icc2)
RF Input Power into a 50Ω Load
Device Voltage
Device Power
Thermal Resistance, Rth
Junction Temperature
Rating
-55 to +125 ºC
1.6 A
19 dBm
+8 V
8W
14.4
°C
/ W
150
°C
Ordering Information
Part No.
AH314-G
AH314-PCB
Description
2.3-2.9 GHz WiMAX 2W Driver Amplifier
2.4-2.7 GHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 500 pieces on a 7” reel.
Specifications and information are subject to change without notice.
TriQuint Semiconductor, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 1 of 6 September 2008
GND / NC
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
