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AH322-S8PCB900 参数 Datasheet PDF下载

AH322-S8PCB900图片预览
型号: AH322-S8PCB900
PDF下载: 下载PDF文件 查看货源
内容描述: 2W高线性度的InGaP HBT放大器 [2W High Linearity InGaP HBT Amplifier]
分类和应用: 放大器
文件页数/大小: 8 页 / 446 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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AH322
2W High Linearity InGaP HBT Amplifier
Product Features
400 – 2700 MHz
+33 dBm P1dB
+50 dBm Output IP3
13.4 dB Gain @ 2140 MHz
500 mA Quiescent Current
+5 V Single Supply
MTTF > 100 Years
Lead-free/RoHS-compliant
SOIC-8 Package
Product Description
The AH322 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrowband-
tuned application circuits with up to +50 OIP3 and +33
dBm of compressed 1dB power. It is housed in a lead-
free/RoHS-compliant SOIC-8 package. All devices are 100%
RF and DC tested.
The AH322 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH322 is ideal for the final stage of
small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a wide
variety of other applications within the 400 to 2700 MHz
frequency band.
Functional Diagram
1
8
2
3
7
6
4
5
Applications
Final stage amplifiers for Repeaters
High Power Amplifiers
Mobile Infrastructure
LTE / WCDMA / EDGE / CDMA
Function
Iref
Input
Output / Vcc
Vbias
GND
GND
Pin No.
8
3
6, 7
1
Backside Paddle
2, 4, 5
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input R.L.
Output R.L.
Output P1dB
Output IP3
(2)
WCDMA Channel Power
(3)
@ -50 dBc ACLR
Typical Performance
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
mA
400
2140
13.4
14.7
7.8
+33
+50
+24.1
4.8
+5
500
30
Typ
Max
2700
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
WCDMA Channel Power
(3)
@ -50 dBc ACLR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
mA
940
19.4
18
8.5
+23.6
+33.0
+47.6
8.5
Typical
1960
14.1
11.3
11.8
+24.4
+33.3
+50.2
4.5
+5
30
500
2140
13.4
14.7
7.8
+24.1
+33
+50
4.8
Noise Figure
Vcc, Vbias
Quiescent Collector Current
(4)
Iref
Output P1dB
Output IP3
(2)
Noise Figure
Vcc, Vbias
Iref
Quiescent Collector Current
600
500
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +21 dBm / tone separated by 1 MHz, 940
MHz. OIP3 measured with two tones at an output power of +24 dBm / tone separated by 1 MHz,
1960 MHz and 2140 MHz respectively. The suppression on the largest IM3 product is used to
calculate the OIP3 using a 2:1 rule.
3. 3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, no clipping, PAR = 10.2 dB @ 0.01%
Probability.
4. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6 and 7.
Absolute Maximum Rating
Parameter
Storage Temperature
RF Input Power, CW, 50 , T = 25ºC
Device Voltage, Vcc, Vbias
Device Current
Device Power
Thermal Resistance, Rth
Junction Temperature, Tj
Rating
-65 to +150
°C
Input P
10
dB
+8 V
1400 mA
8W
18.6
°C
/ W
+200
°C
Ordering Information
Part No.
AH322-S8G
AH322-S8PCB900
AH322-S8PCB1960
AH322-S8PCB2140
Description
2W High Linearity InGaP HBT Amplifier
(lead-free/RoHS-compliant SOIC-8 Pkg)
920 - 960 MHz Evaluation Board
1930 - 1990 MHz Evaluation Board
2110 - 2170 MHz Evaluation Board
.
Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 1000 pieces on a 7” reel.
TriQuint Semiconductor, Inc
Phone 1-800-951-4401
FAX: 408-577-6633
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
April 2009