AH420
•
400 – 2700 MHz
•
+35.7 dBm P1dB
4W High Linearity InGaP HBT Amplifier
Product Features
Product Description
The AH420 is a high dynamic range amplifier in a low-cost
surface mount package. The InGaP/GaAs HBT is able to
achieve high performance with -49 dBc ACLR and +35.7
dBm of compressed 1dB power, operating off of a single
+5V supply. It is housed in a lead-free/green/RoHS-
compliant 4x5mm DFN package. All devices are 100% RF
and DC tested.
Functional Diagram
•
-49 dBc ACLR @ 26 dBm
•
14 dB Gain @ 2140 MHz
•
800 mA Quiescent Current
•
+5 V Single Supply
The AH420 is targeted for use as a final stage amplifier in
•
MTTF > 100 Years
wireless infrastructure repeaters or as driver stages for high
•
Lead-free/green/RoHS-compliant
power amplifiers where high performance is required. In
addition, the amplifier can be used for a wide variety of
12-pin 4x5mm DFN Package
other applications within the 400 to 2700 MHz frequency
band. By operating off of a single +5V rail, other higher
voltage rails are not necessarily needed thus saving system
Applications
costs. The amplifier also has the flexibility to operate at
•
Final stage amplifiers for Repeaters
higher voltage levels to achieve higher compression if
needed by the system.
Function
RF
IN
RF
OUT
I
REF
V
BIAS
NC
Pin No.
3,4,5,6
7,8,9,10
12
1
2,11
•
High Power Amplifiers
•
Mobile Infrastructure
•
LTE / WCDMA / EDGE / CDMA
Specifications
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Gain
Input Return Loss
Output Return Loss
ACPR
(2)
Output P1dB
Output IP3
(4)
Quiescent Collector Current
(3)
Iref
Vcc, Vbias
Typical Performance
Units Min
MHz
MHz
dBm
dB
dB
dB
dBc
dBm
dBm
mA
mA
V
400
2140
+26
14
12
7.4
-49
+35.7
+50
800
20
+5
Typ
Max
2700
Parameter
Frequency
Channel Power
Gain
Input Return Loss
Output Return Loss
ACPR
(2)
Output P1dB
Noise Figure
Output IP3
(4)
Quiescent Collector Current
(3)
Iref
Vcc, Vbias
Units
MHz
dBm
dB
dB
dB
dBc
dBm
dB
dBm
mA
mA
V
940
+27
16
14
6.4
-46.5
+35.2
6.6
+50
Typical
1960
+27
14.1
19
7
-48
+35.6
5.3
+49
800
20
+5
2140
+26
14
12
7.4
-49
+35.7
5.6
+50
13
16
710
900
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
3. This corresponds to the quiescent current under small-signal conditions into pins 6, 7, and 8 when
the current setting resistor, R4 connected to the Iref pin, is at 82
Ω.
4. OIP3 is measured with two tones at out an output power of +27 dBm/tone separated by 1 MHz.
The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
5. The amplifier has been tested for ruggedness to be capable of handling:
10:1 VSWR @ 5Vcc, 2140MHz, +35.2dBm CW Pout, 25 °C
10:1 VSWR @ 5Vcc, 940MHz, +28.5dBm IS-95A Pout, 25 °C
10:1 VSWR @ 5Vcc, 2140MHz, +26.5dBm WCDMA Pout, 25 °C
Absolute Maximum Ratings
Parameter
Storage Temperature
Vcc, Vbias
RF Input Power, CW, 50
Ω,
T=25°C
Reference Current, Iref
Dissipated Power, Pmax
Max Junction Temperature, T
J
For 10
6
hours MTTF
-65 to +150
°C
+14 V
Input P9dB
170 mA
7W
158
°C
10.6
°C
/ W
Rating
Ordering Information
Part No.
AH420-EG
AH420-EPCB900
AH420-EPCB1960
AH420-EPCB2140
Description
4W High Linearity InGaP HBT Amplifier
920-960 MHz Evaluation Board
1930-1990 MHz Evaluation Board
2110-2170 MHz Evaluation Board
Thermal Resistance,
Θ
JC
Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 500 pieces on a 7” reel.
Specifications and information are subject to change without notice.
Page 1 of 8 Aug 2009
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
