CGB241
Data Sheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Description:
The CGB241 GaAs Power Amplifier MMIC has been
especially developed for wireless applications in the
2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1, or
IEEE 802.11b). Its high power added efficiency (typi-
cally 50%) and single positive supply operation makes
the device ideally suited to handheld applications. The
device delivers 22.5 dBm output power at a supply volt-
age of 3.2 V, with an overall
PAE
of 50%. The output
power can be adjusted using an analog control voltage
(V
CTR
). Simple external input-, interstage-, and output
matching circuits are used to adapt to the different re-
quirements of linearity and harmonic suppression in
various applications.
Applications:
•
•
•
•
•
Bluetooth Class 1
Home RF
Cordless Phones
IEEE 802.11b
ISM-band Spread
Spectrum
Package Outline:
Features:
•
2-stage Bluetooth InGaP HBT power amplifier
•
Single voltage supply
•
Wide operating voltage range 2.0 - 5.5 V
•
P
OUT
= 22.5 dBm at
V
C
= 3.2 V
•
Overall power added efficiency (
PAE
) typically
50%
•
Analog power control with four power steps
•
High
PAE
at low–power mode
•
High harmonic suppression typ. 35 dBc
•
Easy external matching concept
•
Thin Small Leadless Package (A = 2.6mm
2
)
Pin Configuration:
1:
Vc1
2:
RFin
3:
NC
4:
Vcntrl1
5:
Vcntrl2
6:
Vc2
7 (paddle): GND
For further information please visit
www.triquint.com
Rev. A; November 14th, 2005.
pg. 1/14
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
