T1G4005528-FS
Applications
•
Military radar
•
Civilian radar
•
Professional and military radio
communications
•
Test instrumentation
•
Avionics
• Wideband or narrowband amplifiers
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
2
5.461
10.992
Product Features
• Frequency: DC to 3.5 GHz
• Linear Gain: >15 dB at 3.5 GHz
• Operating Voltage: 28 V
•
Output Power (P
3dB
): 55 W at 3.5 GHz
•
Lead-free and RoHS compliant
Functional Block Diagram
1
1.524
+.000
3.505 -.203
.508
General Description
The TriQuint T1G4005528-FS is a 55 W (P
3dB
)
discrete GaN on SiC HEMT which operates from
DC to 3.5 GHz. The device is constructed with
TriQuint’s proven 0.25 µm production process,
which features advanced field plate techniques
to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management
costs.
Pin #
1
2
Flange
Symbol
RF Output
RF Input
Source
9.652
Ordering Information
Material No.
1078974
1079752
Part No.
T1G4005528-
FS
T1G4005528-
FS-EVB1
Description
Packaged part:
Flangeless
3.0-3.5 GHz
Eval Brd
ECCN
EAR99
EAR99
Datasheet: Rev D 8/10/2011
© 2011 TriQuint Semiconductor, Inc.
–1–
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
1.016
Pin Configurations
TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
