Advance Product Information
Ka Band 2 Watt Power Amplifier
Key Features and Performance
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0.25 um pHEMT Technology
20 dB Nominal Gain
2W Nominal Pout
-30 dBc IMR3 @ 26 dBm SCL
Bias 7V @ 1.4 A
Chip Dimensions 5.89 mm x 3.66 mm
TGA1055-EPU
Primary Applications
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LMDS
Point-to-Point Radio
Satellite Ground Terminal
Release Status
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Currently shipping Engineering
Prototype Units
EG1055B
Bias Testing: Vd=7V, Id=1.38A, T=25C, Freq=29GHz
35
33
Output Power (dBm) & Gain (dB)
31
29
27
25
23
21
19
17
15
5
6
7
8
9
10
11
12
13
14
15
Input Power (dBm )
20
18
16
14
12
10
8
6
4
2
0
Power Added Efficiency (%)
Pout
Gain
PAE
Chip Dimensions 5.89 mm x 3.66 mm
Preliminary Pout, Gain and PAE Data at 29GHz
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
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TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
