Product Datasheet
August 15, 2000
36 - 40 GHz Power Amplifier
TGA1073C-SCC
Key Features and Performance
•
•
•
•
•
•
0.25um pHEMT Technology
36-40 GHz Frequency Range
26 dBm Nominal Pout @ P1dB, 38GHz
15 dB Nominal Gain
Bias 5-7V @ 240 mA
Chip Dimensions 2.4 mm x 1.45 mm
Primary Applications
•
The TriQuint TGA1073C-SCC is a two stage PA MMIC
design using TriQuint’s proven 0.25
µm
Power pHEMT
process to support a variety of millimeter wave
applications including point-to-point digital radio and
point-to-multipoint systems.
The two-stage design consists of two 400
µm
input
devices driving four 400
µm
output devices.
The TGA1073C provides 24 dBm of output power at
1dB gain compression and 26 dBm saturated output
power across the 36-40 GHz with a typical small signal
gain of 15 dB.
The TGA1073C requires a minimum of off-chip
components. Each device is 100% DC and RF tested
on-wafer to ensure performance compliance. The
device is available in chip form.
Typical Performance, 36-40 GHz
33
Point-to-Point Radio
Point-to-Multipoint Radio
TGA1073C Typical RF Performance (Fixtured)
20
•
Gain and Return Loss (dB)
15
10
5
0
-5
-10
-15
-20
-25
33
34
35
36
37
38
39
40
S21
S22
S11
41
42
43
Frequency (GHz)
TGA1073C Typical RF Performance (Fixtured)
50
P1dB
48
46
44
VD = +5V, +6V, +7V
42
40
38
IMR3 @ VD = +6V
36
34
32
30
36
37
38
39
40
41
42
30
27
24
21
18
15
12
9
6
3
Output P1dB
Saturated Output Power
Saturated PAE
Output OTOI
IMR3 @ SCL = P1dB - 10dB
Input Return Loss
Output Return Loss
Reverse Isolation
Quiescent Current
dBm
dBm
%
dBm
dBc
dB
dB
dB
mA
24
26
23
25
27
22
34
34
-10
-8
-35
26
28
20
225
240
260
Frequency (GHz)
1
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
IMR3 @ SCL=P1dB-10dB (dBc)
Output Power @ P1dB (dBm)
Parameter
Small Signal Gain
Gain Flatness
Unit +5V Supply +6V Supply +7V Supply
dB
15
dBpp
1
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