Product Datasheet
January 21, 2002
18-27 GHz 1W Power Amplifier
Key Features
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•
•
•
•
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TGA1135B-SCC
0.25 um pHEMT Technology
14 dB Nominal Gain at 23GHz
29 dBm Nominal P1dB
37dBm OTOI typical
Typical 15dB Input/Output RL
Bias 6 - 7V @ 480 mA
On-chip power detector diode
Chip Dimensions 2.641 mm x 1.480 mm
Primary Applications
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Point-to-Point Radio
Point-to-Multipoint Communications
Ka Band Sat-Com
TGA1135B Fixtured Amplifier Typical Small Signal Data
Wafer 993150303, 6V/540mA
Product Description
The TriQuint TGA1135B-SCC is a balanced two-
stage HPA MMIC design using TriQuint’s proven
0.25 um Power pHEMT process. The
TGA11135B is designed to support a variety of
millimeter wave applications including point-to-
point digital radio and LMDS/LMCS.
The balanced configuration two stage design
consists of a pair of 600um input devices driving a
4 x 600um output stage. Power combining is
achieved with on-chip Lange couplers.
The TGA1135B-SCC provides 29 dBm nominal
output power at 1dB compression across
18 - 27GHz. Typical small signal gain is 14 dB
across the band. Input and output return loss is
typically -15dB.
An on-chip power detector and reference diode
may be used for power monitoring/control and
bias control loops.
P1dB (dBm)
S21 (dB)
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Frequency (GHz)
TGA1135B Nominal Output Power
Wafer 993150303, Idq=540mA
32
31.5
31
30.5
30
29.5
29
28.5
28
27.5
27
16
17
18
19
20
21
22
23
24
25
26
27
28
29
Frequency (GHz)
Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz
VD = 7V
The TGA1135B-SCC requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance
compliance. The device is available in chip form.
VD = 6V
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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