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TGA1135B-SCC 参数 Datasheet PDF下载

TGA1135B-SCC图片预览
型号: TGA1135B-SCC
PDF下载: 下载PDF文件 查看货源
内容描述: 18-27 GHz的1W功率放大器 [18-27 GHz 1W Power Amplifier]
分类和应用: 放大器射频微波功率放大器
文件页数/大小: 10 页 / 1102 K
品牌: TRIQUINT [ TRIQUINT SEMICONDUCTOR ]
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Product Datasheet
January 21, 2002
TGA1135B-SCC
Assembly Process Notes
Reflow process assembly notes:
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AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
alloy station or conveyor furnace with reducing atmosphere
no fluxes should be utilized
coefficient of thermal expansion matching is critical for long-term reliability
storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
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vacuum pencils and/or vacuum collets preferred method of pick up
avoidance of air bridges during placement
force impact critical during auto placement
organic attachment can be used in low-power applications
curing should be done in a convection oven; proper exhaust is a safety concern
microwave or radiant curing should not be used because of differential heating
coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
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thermosonic ball bonding is the preferred interconnect technique
force, time, and ultrasonics are critical parameters
aluminum wire should not be used
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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