Advance Product Information
May 16, 2000
Ka Band Low Noise Amplifier
TGA1307-EPU
Key Features and Performance
•
•
•
•
•
•
Chip Dimensions 2.54 mm x 1.15 mm
0.25um pHEMT Technology
23-29 GHz Frequency Range
3.1 dB Nominal Noise Figure 28GHz
17 dB Nominal Gain
OTOI > 22dBm
5V, 50 mA Self-Bias
Primary Applications
•
•
Point-to-Point Radio
Point-to-Multipoint Communications
10
9
8
7
6
Vd = 5V, Id1
≈
45mA
Typical NF @ 25C
5
4
3
R/C 35_35
2
1
0
18
R/C 50_50
R/C 59_59
R/C 70_70
R/C 75_75
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
25
EG1307 Fixtured Small Signal Data, Wafer 991880601
Vd = 5V, Id1
≈
45mA
20
15
Typical Gain @ 25C
10
R/C 9_21
R/C 40_35
5
R/C 47_31
R/C 44_15
R/C 50_30
0
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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